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| TLP131 TOSHIBA Photocoupler GaAs Ired & Photo-Transistor TLP131 Office Machine Programmable Controllers AC / DC-Input Module Telecommunication The TOSHIBA mini flat coupler TLP131 is a small outline coupler, suitable for surface mount assembly. TLP131 consists of a photo transistor, optically coupled to a gallium arsenide infrared emitting diode. * * * * Collector-emitter voltage: 80V (min.) Current transfer ratio: 50% (min.) Rank GB: 100% (min.) Isolation voltage: 3750Vrms (min.) UL recognized: UL1577, file No. E67349 TOSHIBA Weight: 0.09 g 11-4C2 Unit in mm TLP131 base terminal is for the improvement of speed, reduction of dark current, and enable operation. Pin Configurations (top view) 1 6 5 3 1 : Anode 3 : Cathode 4 : Emitter 5 : Collector 6 : Base 4 1 2002-09-25 TLP131 Current Transfer Ratio Type Classification Current Transfer Ratio (%) (IC / IF) IF = 5mA, VCE = 5V, Ta = 25C Min. Max. 50 50 100 100 600 150 300 600 Marking Of Classification (None) TLP131 Rank Y Rank GR Rank GB BLANK, Y, Y, G, G, B, B, GB Y, Y G, G G, G, B, B, GB Note: Application type name for certiffication test,please use standard product type name,i.e. TLP131(GB): TLP131 Maximum Ratings (Ta = 25C) Characteristic Forward current Forward current derating (Ta53C) LED Peak forward current (100s pulse,100pps) Reverse voltage Junction temperature Collector-emitter voltage Collector-base voltage Emitter-collector voltage Detector Emitter-base voltage Collector current Peak collector current (10ms pulse,100pps) Power dissipation Power dissipation derationg (Ta 25C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10s) Total package power dissipation Total package power dissipation derating (Ta 25C) Isolation voltage (AC, 1min., RH 60%) (Note 1) Symbol IF IF / C IFP VR Tj VCEO VCBO VECO VEBO IC ICP PC PC / C Tj Tstg Topr Tsol PT PT / C BVS Rating 50 -0.7 1 5 125 80 80 7 7 50 100 150 -1.5 125 -55~125 -55~100 260 200 -2.0 3750 Unit mA mA / C A V C V V V V mA mA mW mW / C C C C C mW mW / C Vrms (Note 1) Device considered a two terminal device: Pins 1 and 3 shorted together, and pins 4, 5 and 6 shorted together. 2 2002-09-25 TLP131 Recommended Operating Conditions Characteristic Supply voltage Forward current Collector current Operating temperature Symbol VCC IF IC Topr Min. -25 Typ. 5 16 1 Max. 48 25 10 85 Unit V mA mA C Individual Electrical Characteristics (Ta = 25C) Characteristic Forward voltage LED Reverse current Capacitance Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Detector collector dark current Symbol VF IR CT V(BR)CEO V(BR)ECO V(BR)CBO V(BR)EBO ICEO Test Condition IF = 10 mA VR = 5 V V = 0, f = 1 MHz IC = 0.5mA IE = 0.1mA IC = 0.1mA IE = 0.1mA VCE = 48V VCE = 48V,Ta = 85C VCE = 48V,Ta = 85C RBE = 1M VCB = 10V VCE = 5V,IC = 0.5mA V = 0, f = 1MHz Min. 1.0 80 7 80 7 Typ. 1.15 30 10 2 0.5 0.1 400 10 Max. 1.3 10 100 50 10 Unit V A pF V V V V nA A A nA pF Collector dark current Collector dark current DC forward current gain Capacitance (collector to emitter) ICER ICBO hFE CCE Coupled Electrical Characteristics (Ta = 25C) Characteristic Current transfer ratio Symbol IC / IF Test Condition IF = 5 mA, VCE = 5 V Rank GB IF = 1 mA, VCE = 0.4 V Rank GB IF = 5mA,VCB = 5V IC = 2.4 mA, IF = 8 mA Collector-emitter saturation voltage Off-state collector current VCE (sat) IC = 0.2 mA, IF = 1 mA Rank GB IF = 0.7mA, VCE = 48 V Min. 50 100 30 Typ. 60 10 0.2 1 Max. 600 600 0.4 0.4 10 A V Unit % Saturated CTR Base photo-current IC / IF (sat) IPB % A IC (off) 3 2002-09-25 TLP131 Isolation Characteristics (Ta = 25C) Characteristic Capacitance (input to output) Isolation resistance Symbol CS RS Test Condition VS = 0, f = 1 MHz VS = 500 V AC, 1 minute Isolation voltage BVS AC, 1 second, in oil DC, 1 minute, in oil Min. 5x10 10 Typ. 0.8 10 14 Max. Unit pF Vrms Vdc 3750 10000 10000 Switching Characteristics (Ta = 25C) Characteristic Rise time Fall time Turn-on time Turn-off time Turn-on time Storage time Turn-off time Turn-on time Storage time Turn-off time Symbol tr tf ton toff tON ts tOFF tON ts tOFF RL = 1.9 k%) RBE = OPEN VCC = 5 V, IF = 16 mA RL = 1.9 k%) RBE = 220 k VCC = 5 V, IF = 16 mA (Fig.1) VCC = 10 V, IC = 2 mA RL = 100 Test Condition Min. (Fig.1) Typ. 2 3 3 3 2 25 40 2 20 30 Max. s s s Unit Fig. 1 Switching time test circuit IF tS VCE VCC 4.5V 0.5V tOFF IF VCC RL RBE VCE tON 4 2002-09-25 TLP131 IF - Ta 100 200 PC - Ta Allowable forward current IF (mA) Allowable collector power dissipation PC (mW) 100 120 80 160 60 120 40 80 20 40 0 -20 0 20 40 60 80 0 -20 0 20 40 60 80 100 120 Ambient temperature Ta (C) Ambient temperature Ta (C) IFP - DR 3000 100 Pulse width 100ms Ta = 25C 50 Ta = 25C IF - VF Pulse forward current IFP (mA) 500 300 IF (mA) Forward current 10 -3 1000 30 10 5 3 100 50 30 1 0.5 0.3 10 3 3 10 -2 3 10 -1 3 10 0 Duty cycle ratio DR 0.1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Forward voltage VF (V) Forward voltage temperature coefficient DVF / DTa (mV / C) DVF / DTa - IF -3.2 -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.1 1000 IFP - VFP (mA) IFP Pulse forward current 500 300 100 50 30 10 5 3 1 1.0 1.4 Pulse width 10ms Repetitive Frequency = 100Hz Ta = 25C 1.8 2.2 2.6 3.0 0.3 0.5 1 3 5 10 30 50 Forward current IF (mA) Pulse forward voltage VFP (V) 5 2002-09-25 TLP131 IC - VCE 50 50mA 40 30mA 20mA 15mA 10mA PC(MAX.) 20 IF = 5mA 10 Ta = 25C 30 Ta = 25C IC - VCE IC (mA) (mA) IF = 50mA 40mA 20 30mA 20mA 10mA Collector current IC Collector current 30 10 5mA 2mA 0 0 0 0 2 4 6 8 10 0.2 0.4 0.6 0.8 1.0 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) IC - IF 100 50 IC / IF - IF 1000 Collector current IC (mA) 10 5 3 Current transfer ratio IC / IF 30 (%) Ta = 25C VCE = 10V VCE = 5V VCE = 0.4V Ta = 25C 500 SAMPLE A 300 SAMPLE A SAMPLE B 1 0.5 0.3 0.1 0.3 VCE = 10V VCE = 5V VCE = 0.4V 100 SAMPLE B 50 0.5 1 3 5 10 30 50 100 0.3 0.5 1 3 5 10 30 50 100 Forward current IF (mA) Forward current IF (mA) IC - IF at RBE 100 Ta = 25C 50 VCE = 5V 30 10 5 3 IF 1 0.5 0.3 0.1 0.1 RBE = 500kW 50kW RBE 100kW VCC 300 Ta = 25C IF VCB IPB - IF (ms) IPB (mA) 100 30 Collector current IC Base photo current 10 3 1 0.3 0.1 0.1 A VCB = 0V VCB = 5V A 0.3 0.5 1 3 5 10 30 50 100 0.3 0.5 1 3 5 10 30 50 100 Forward current IF (mA) Forward current IF (mA) 6 2002-09-25 TLP131 ICEO - Ta 101 0.24 VCE(sat) - Ta IF = 5mA Ic = 1mA 0.20 10 0 Collector-emitter saturation voltage VCE(sat) (V) 0.16 Collector dark current ICEO (A) VCE = 48V 10-1 24V 10V 5V 0.12 0.08 0.04 10-2 0 -40 -20 0 20 40 60 80 100 Ambient temperature Ta () 10-3 10-4 0 20 40 60 80 100 120 Ambient temperature Ta () IC - Ta 100 VCE = 5V IF = 25mA 10mA 100 300 Switching Time - RL Ta = 25 IF = 16mA VCC = 5V RBE = 220k 50 30 (mA) 5mA 10 50 IC (ms) tOFF ts 5 3 30 Collector current Switching time 1mA 1 10 5 0.5 0.3 0.5mA 3 tON 0.1 -20 0 20 40 60 80 100 1 1 3 5 10 30 50 100 Ambient temperature Ta () Load resistance RL (k9) 7 2002-09-25 TLP131 Switching Time - RBE 1000 500 Ta = 25 IF = 16mA VCC = 5V RL = 1.9k 1000 Ta = 25C IF = 16mA 500 VCC = 5V 300 Switching Time - RL 300 tOFF 100 100 tOFF (ms) (ms) 50 30 ts 50 30 ts Switching time 10 Switching time 10 5 3 tON 5 3 tON 1 100k 300k 1M 3M 1 1 3 5 10 30 50 100 Base-emitter resistance RBE (9) Load resistance RL (9) 8 2002-09-25 TLP131 RESTRICTIONS ON PRODUCT USE 000707EBC * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. * The products described in this document are subject to the foreign exchange and foreign trade laws. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 9 2002-09-25 |
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